Introduction

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) provides elemental, chemical state, and molecular information from surfaces of solid materials. The average depth of analysis for a TOF-SIMS measurement is approximately 1 nm. Physical Electronics TOF-SIMS instruments provide an ultimate spatial resolution of less than 0.1 µm. Spatial distribution information is obtained by scanning a micro focused ion beam across the sample surface. Depth distribution information is obtained by combining TOF-SIMS measurements with ion milling (sputtering) to characterize a thin film structure. In addition, the Physical Electronics TOF-SIMS instrument provides a unique 3D analysis capability that combines in-situ focused ion beam sectioning with high mass resolution and high spatial resolution imaging (HR2) to provide 3D chemical characterization.

Application range:

--Surface characterization: via mass spectroscopy to characterize and analyze the element (atom, ion), isotope, and molecular structure of sample surface

--Structural analysis: via line scanning and 2D mapping to visualize the element distribution.

--Composition analysis in depth

Representive Results

1. Surface elemental analysis via massspectroscopy

2. ToF-SIMS 2D mapping

3. Compositional depth profile

4. ToF-SIMS compositional depth profile and 3D image

Sample Requirement

1. 50mg of powder sample.

2. The film/block sample is about 1 *1cm in length and width, with a thickness not exceeding5mm.

3. It is stored in vacuum and marked clearly on the testsurface.